Transistors N-Channel 100V 42A to-220 Mosfet Irf1310n Irf1310npbf

• Encapsulation Structure: Ceramic Packaged Transistor
• Installation: Plug-in Triode
• Working Frequency: Overclocking
• Power Level: High Power
• Structure: Diffusion
• Material: Germanium
• Model NO.: IRF1310NPBF
• Transistor Polarity: N-Channel
• Category: Mosfet
• Fet Technology: Metal-Oxide Semiconductor
• Product: Irf1310npbf
• Description: Mosft 100V 42A 36mohm 73.3nc
• Subcategory: Mosfet
• Packaging: Tube/ Box
• Transport Package: Box
• Trademark: CHN / Original
• Origin: China
• Production Capacity: 1000000

Product Description

Product Paramenters

Transistor Polarity:	N-Channel
Number of Channels:	1 Channel
Vds - Drain-Source Breakdown Voltage:	100 V
Id - Continuous Drain Current:	42 A
Rds On - Drain-Source Resistance:	36 mOhms
Vgs - Gate-Source Voltage:	- 20 V, + 20 V
Vgs th - Gate-Source Threshold Voltage:	2 V
Qg - Gate Charge:	73.3 nC
Minimum Operating Temperature:	- 55 C
Maximum Operating Temperature:	+ 175 C
Pd - Power Dissipation:	160 W
Channel Mode:	Enhancement
Packaging:	Tube
Configuration:	Single
Height:	15.65 mm

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