Irfb4229 Irfb4229pbf Mosfet Field Effect Transistor

• Certification: RoHS
• Shape: GT
• Shielding Type: Sharp Cutoff Shielding Tube
• Cooling Method: Air Cooled Tube
• Function: High Back Pressure Transistor, Microwave Transistor, Switch Transistor, Transistor
• Working Frequency: Low Frequency
• Model NO.: IRFB4229PBF
• Structure: Planar
• Encapsulation Structure: Chip Transistor
• Power Level: High Power
• Material: Silicon
• Polarity/Channel Type: N-Channel
• Product Number: Irfb4229pbf
• Condition: Brand Newand Original
• Shipping by: DHL\UPS\FedEx\EMS\HK Postdhl\UPS\FedEx\EMS\HK Post
• Category: Transistors
• Technology: Mosfet
• Transport Package: Tube
• Specification: iron and plastic
• Origin: Chn

Product Description

Product Attributes
 

FET Type	N-Channel
Technology	MOSFET (Metal Oxide)
Current - Continuous Drain (Id) @ 25°C	46A (Tc)
Drive Voltage (Max Rds On, Min Rds On)	10V
Rds On (Max) @ Id, Vgs	46mOhm @ 26A, 10V
Vgs(th) (Max) @ Id	5V @ 250µA
Vgs (Max)	±30V
FET Feature	-
Power Dissipation (Max)	330W (Tc)

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