Field-Effect Transistor 30V 10.5A P-Channel Enhancement Mosfet Ao4435

• Shape: GT
• Shielding Type: Remote Cut-Off Shielding Tube
• Cooling Method: Naturally Cooled Tube
• Working Frequency: Overclocking
• Structure: Alloy
• Encapsulation Structure: Ceramic Packaged Transistor
• Model NO.: AO4435
• Power Level: High Power
• Material: Germanium
• Brand Name: Original
• Electronics Description: P-Channel Enhancement Mode Transistor
• Product Number: Ao4435
• Category: Transistor
• Fet Type: P-Channel
• Transport Package: /
• Specification: /
• Trademark: /
• Origin: /

Product Description

 

FET Type	P-Channel
Technology	MOSFET (Metal Oxide)
Current - Continuous Drain (Id) @ 25°C	10.5A (Ta)
Drive Voltage (Max Rds On, Min Rds On)	5V, 20V
Rds On (Max) @ Id, Vgs	14mOhm @ 11A, 20V
Vgs(th) (Max) @ Id	3V @ 250µA
Vgs (Max)	±25V
FET Feature	-
Power Dissipation (Max)	3.1W (Ta)
Operating Temperature	-55°C ~ 150°C (TJ)
Mounting Type	Surface Mount