Original IGBT Transistor To263 Rjp63K2

• Certification: RoHS, CE, ISO, CCC
• Encapsulation Structure: Chip Transistor
• Installation: Plug-in Triode
• Working Frequency: Enhanced
• Power Level: High Power
• Function: Power Triode, Switching Triode
• Model NO.: RJP63K2
• Structure: Alloy
• Material: Germanium
• Brand Name: Original
• Lead Free Status: RoHS Compliant
• Shipping by: DHL\UPS\FedEx\EMS\HK Postdhl\UPS\FedEx\EMS\HK Post
• Condition: Brand Newand Original
• Transport Package: Roll
• Specification: Plastic and copper
• Trademark: CHN
• Origin: China

Product Description

Product Paramenters

· Trench gate and thin wafer technology (G6H-II series)
· Low collector to emitter saturation voltage: VCE(sat) = 1.9 V typ
· High speed switching: tr = 60 ns typ, tf = 200 ns typ.
· Low leak current: ICES = 1 mA max

 

 

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