F4n60 4A600V Medium and High Voltage MOS 4n60 Mosfet

• Certification: RoHS
• Encapsulation Structure: Plastic Sealed Transistor
• Installation: To220
• Working Frequency: High Frequency
• Power Level: Standard
• Function: Photosensitive, Power Triode
• Model NO.: F4N60
• Structure: Diffusion
• Material: Iron and Plastic
• Application: Used in Various Power Switching Circuit
• Transport Package: Tube
• Specification: standard
• Trademark: original
• Origin: Chn
• Production Capacity: 100000

Product Description

Product Description

These N-channel Enhanced VDMOSFETs, is obtained by the self-aligned

planar technology which reduce the conduction loss,improve switching performance and enhance the avalanche energy. Which accords with the RoHS standard.

*Used in Various Power Switching Circuit for System Miniaturization and HigherEfficiency.
*Power Switch Circuit of Electron Ballast and Adaptor.

  

1.Original factory sealed packing with standard types: tube, tray, tape and reel,
box, bag packing. Kindly please let us know if you have any special requirement.

2.All items are packed with blister bag and foam in custom shipping cartons for
strong protection.