Field Effect Transistor Mosfet N-Channel 650V39A Ipw65r110cfd 65f6110A

• Certification: RoHS, CE, ISO, CCC
• Encapsulation Structure: Ceramic Packaged Transistor
• Installation: Plug-in Triode
• Model NO.: IPW65R110CFD
• Working Frequency: Overclocking
• Power Level: High Power
• Function: Power Triode, Switching Triode
• Structure: Flat
• Material: Germanium
• Fet Type: N Channel
• Ds Breakdown Voltage-Min: 650V
• Technology: Mosfet (Metal Oxide)
• Installation Type: Through Hole
• Product Number: Ipw65r110cfd
• Category: Transistors - Fets, Mosfet
• Drive Voltage (Max RDS on, Min RDS on): 10V
• Fet Technology: Metal-Oxide Semiconductor
• Gate Charge: (Qg) (Max) @ Vgs 118 Nc @ 10 V
• Transistor Application: Switching
• Transport Package: Carton
• Specification: Plastic and copper
• Trademark: CHN
• Origin: China

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FAQ


1.Who are you?
We are Manufacturer of High Quality China's Own Chips Included IC,Transistor,Resistor,Capacitors,
Memory,IGBT, Mosfet,Traic/SCR,Optoelectronics.Almost all components of electronics in our production.

2.Do you also selling Original parts?
Yes,We are also supplying original Materials bcz all of our designed chips are based on the Original,So we
are cooperating with some Original of Design and Development Department that we have good sources of original.

3.What is your advantage?
Our High Quality Products with reasonable price can completely replace the original components.

4.Can you provide OEM Service?
Yes,we can,If you have Projects and request plz contact us.

5.Can i buy all im requireing components from you?
Of course yes,From Bom List quotation till Door to Door express service,We have
professional Sales to connect with you all the time.