Encapsulation Structure: | Chip Transistor |
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Installation: | Through Hole |
Function: | Power Triode, Mosfet |
Material: | Silicon |
Additional Feature: | Avalanche Rated |
Packing Type: | Tube |
Samples: |
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Category | Discrete Semiconductor Products Transistors - FETs, MOSFETs - Single |
Package | Tube |
FET Type | N-Channel |
Technology | MOSFET (Metal Oxide) |
Current - Continuous Drain (Id) @ 25°C | 30A (Tc) |
Drive Voltage (Max Rds On, Min Rds On) | 10V |
Rds On (Max) @ Id, Vgs | 75mOhm @ 18A, 10V |
Vgs(th) (Max) @ Id | 4V @ 250µA |
Vgs (Max) | ±20V |
FET Feature | - |
Power Dissipation (Max) | 214W (Tc) |
Operating Temperature | -55°C ~ 175°C (TJ) |
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