Original IGBT Transistor To263 Rjp63K2

Product Details
Certification: RoHS, CE, ISO, CCC
Encapsulation Structure: Chip Transistor
Installation: Plug-in Triode
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Number of Employees
18
Year of Establishment
2008-09-17
  • Original IGBT Transistor To263 Rjp63K2
  • Original IGBT Transistor To263 Rjp63K2
  • Original IGBT Transistor To263 Rjp63K2
  • Original IGBT Transistor To263 Rjp63K2
  • Original IGBT Transistor To263 Rjp63K2
  • Original IGBT Transistor To263 Rjp63K2
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Basic Info.

Model NO.
RJP63K2
Working Frequency
Enhanced
Power Level
High Power
Function
Power Triode, Switching Triode
Structure
Alloy
Material
Germanium
Brand Name
Original
Lead Free Status
RoHS Compliant
Shipping by
DHL\UPS\FedEx\EMS\HK Postdhl\UPS\FedEx\EMS\HK Post
Condition
Brand Newand Original
Transport Package
Roll
Specification
Plastic and copper
Trademark
CHN
Origin
China

Product Description


Original IGBT Transistor To263 Rjp63K2
Original IGBT Transistor To263 Rjp63K2

Product Paramenters

· Trench gate and thin wafer technology (G6H-II series)
· Low collector to emitter saturation voltage: VCE(sat) = 1.9 V typ
· High speed switching: tr = 60 ns typ, tf = 200 ns typ.
· Low leak current: ICES = 1 mA max
 
 
Original IGBT Transistor To263 Rjp63K2

Original IGBT Transistor To263 Rjp63K2
Company Profile
Original IGBT Transistor To263 Rjp63K2

Original IGBT Transistor To263 Rjp63K2
Original IGBT Transistor To263 Rjp63K2Original IGBT Transistor To263 Rjp63K2
Product packaging
Original IGBT Transistor To263 Rjp63K2FAQ

Original IGBT Transistor To263 Rjp63K2
Original IGBT Transistor To263 Rjp63K2

 

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