Certification: | RoHS, CE, ISO, CCC |
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Encapsulation Structure: | Ceramic Packaged Transistor |
Installation: | Plug-in Triode |
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Transistor Polarity: | N-Channel |
Number of Channels: | 1 Channel |
Vds - Drain-Source Breakdown Voltage: | 900 V |
Id - Continuous Drain Current: | 36 A |
Rds On - Drain-Source Resistance: | 120 mOhms |
Vgs - Gate-Source Voltage: | - 20 V, + 20 V |
Vgs th - Gate-Source Threshold Voltage: | 2.5 V |
Qg - Gate Charge: | 270 nC |
Minimum Operating Temperature: | - 55 C |
Maximum Operating Temperature: | + 150 C |
Pd - Power Dissipation: | 417 W |
Channel Mode: | Enhancement |
Tradename: | CoolMOS |
Packaging: | Tube |
Configuration: | Single |