Function: | Switch Transistor, Transistor Mosfet |
---|---|
Material: | Silicon |
Subcategory: | Fet General Purpose Power |
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FET Type
|
N-Channel
|
Technology
|
MOSFET (Metal Oxide)
|
Current - Continuous Drain (Id) @ 25°C
|
55A (Tc)
|
Drive Voltage (Max Rds On, Min Rds On)
|
10V
|
Rds On (Max) @ Id, Vgs
|
20mOhm @ 27.5A, 10V
|
Vgs(th) (Max) @ Id
|
4V @ 250µA
|
Vgs (Max)
|
±25V
|
FET Feature
|
-
|
Power Dissipation (Max)
|
133W (Tc)
|
Operating Temperature
|
-55°C ~ 175°C (TJ)
|
Mounting Type
|
Through Hole
|
Drain to Source Voltage (Vdss)
|
60V
|