Encapsulation Structure: | Chip Transistor |
---|---|
Installation: | SMD Triode |
Working Frequency: | Overclocking |
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Product Description
Transistor Type | NPN |
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Current - Collector (Ic) (Max) | 3A |
Voltage - Collector Emitter Breakdown (Max) | 30V |
Vce Saturation (Max) @ Ib, Ic | 1.1V @ 150mA, 3A |
Current - Collector Cutoff (Max) | 100µA |
DC Current Gain (hFE) (Min) @ Ic, Vce | 100 @ 100mA, 2V |
Power - Max | 12.5W |
Frequency - Transition | 100MHz |
Operating Temperature | 150°C (TJ) |
Mounting Type | Through Hole |