Encapsulation Structure: | Ceramic Packaged Transistor |
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Installation: | SMD Triode |
Working Frequency: | Overclocking |
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Transistor Polarity: | NPN |
Configuration: | Single |
Collector- Emitter Voltage VCEO Max: | 40 V |
Collector- Base Voltage VCBO: | 60 V |
Emitter- Base Voltage VEBO: | 6 V |
Collector-Emitter Saturation Voltage: | 0.75 V |
Maximum DC Collector Current: | 0.6 A |
Pd - Power Dissipation: | 0.6 W |
Gain Bandwidth Product fT: | 250 MHz |
Minimum Operating Temperature: | - 55 C |
Maximum Operating Temperature: | + 150 C |