Conductive Type: | Unipolar Integrated Circuit |
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Integration: | GSI |
Technics: | Thick Film IC |
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Description:
Transistor type: NPN emitter breakdown voltage (Vceo) : 230V collector current (Ic) : 15A Power (Pd) : 150W DC current gain (hFE@Ic,Vce) : 80@1A,5V
Note:
Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook ("Handling Precautions"/"Derating Concept and Methods") and individual reliability data (i.e. reliability test report and estimated failure rate, etc).