Certification: | RoHS |
---|---|
Encapsulation Structure: | Ceramic Packaged Transistor |
Installation: | SMD Triode |
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Package
|
Tube
|
FET Type
|
N-Channel
|
Technology
|
MOSFET (Metal Oxide)
|
Current - Continuous Drain (Id) @ 25°C
|
12A (Tc)
|
Drive Voltage (Max Rds On, Min Rds On)
|
10V
|
Rds On (Max) @ Id, Vgs
|
500mOhm @ 12A, 10V
|
Vgs(th) (Max) @ Id
|
4V @ 250µA
|
Vgs (Max)
|
±20V
|
FET Feature
|
-
|
Power Dissipation (Max)
|
150W (Tc)
|
Operating Temperature
|
-55°C ~ 150°C (TJ)
|
Mounting Type
|
Through Hole
|
Supplier Device Package
|
TO-204AA (TO-3)
|
Package / Case
|
TO-204AA, TO-3
|
Drain to Source Voltage (Vdss)
|
500V
|
Gate Charge (Qg) (Max) @ Vgs
|
120nC @ 10V
|
Input Capacitance (Ciss) (Max) @ Vds
|
2700pF @ 25V
|