Shape: | ST |
---|---|
Encapsulation Structure: | Chip Transistor |
Material: | Germanium Transistors |
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Category
|
Discrete Semiconductor Products
Transistors - FETs, MOSFETs - Single
|
Package
|
Tube
|
FET Type
|
N-Channel
|
Technology
|
MOSFET (Metal Oxide)
|
Current - Continuous Drain (Id) @ 25°C
|
10A (Tc)
|
Drive Voltage (Max Rds On, Min Rds On)
|
10V
|
Rds On (Max) @ Id, Vgs
|
550mOhm @ 4A, 10V
|
Vgs(th) (Max) @ Id
|
4V @ 250µA
|
Vgs (Max)
|
±25V
|
FET Feature
|
-
|
Power Dissipation (Max)
|
70W (Tc)
|
Operating Temperature
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-55°C ~ 150°C (TJ)
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Mounting Type
|
Through Hole
|