Transistor Ssp2n60 Mosfet N-Channel 600V

• Material: Silicon (Si)
• Description: Mosfet N-CH/600V/2A/5ohm
• Product Category: Mosfet
• Mounting Style: Through Hole
• Transistor Polarity: N-Channel
• Product Number: Ssp2n60
• Model NO.: SSP2N60
• Subcategory: Mosfets
• Ds Breakdown Voltage-Min: 600 V
• Category: Transistors - Fets, Mosfets - Single
• Pulsed Drain Current-Max (Idm): 6 a
• Origin: China

Product Description

Notice:All price can be negotiate.Plz Contact us to get the best price!
 

 

 

Product Description


 

Technology:	Si
Mounting Style:	Through Hole
Transistor Polarity:	N-Channel
Number of Channels:	1 Channel
Vds - Drain-Source Breakdown Voltage:	600 V
Id - Continuous Drain Current:	2 A
Rds On - Drain-Source Resistance:	5 Ohms
Vgs - Gate-Source Voltage:	- 30 V, + 30 V
Minimum Operating Temperature:	- 55 C
Maximum Operating Temperature:	+ 150 C
Pd - Power Dissipation:	54 W
Channel Mode:	Enhancement
Packaging:	Tube
Configuration:	Single
Height:	16.3 mm
Length:	10.67 mm
Transistor Type:	1 N-Channel
Type:	MOSFET
Width:	4.7 mm

 

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We are Manufacturer of High Quality China's Own Chips Included IC,Transistor,Resistor,Capacitors,Memory,IGBT,Mosfet,Traic/SCR,Optoelectronics.
Almost all components of electronics in our production.

 

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