Certification: | RoHS |
---|---|
Shape: | DIP |
Encapsulation Structure: | Chip Transistor |
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Technology
|
MOSFET (Metal Oxide)
|
Drain to Source Voltage (Vdss)
|
40 V
|
Current - Continuous Drain (Id) @ 25°C
|
120A (Tc)
|
Drive Voltage (Max Rds On, Min Rds On)
|
6V, 10V
|
Rds On (Max) @ Id, Vgs
|
3.3mOhm @ 70A, 10V
|
Vgs(th) (Max) @ Id
|
3.9V @ 100µA
|
Gate Charge (Qg) (Max) @ Vgs
|
93 nC @ 10 V
|
Vgs (Max)
|
±20V
|
Input Capacitance (Ciss) (Max) @ Vds
|
3183 pF @ 25 V
|