Encapsulation Structure: | Chip Transistor |
---|---|
Installation: | Plug-in Triode |
Working Frequency: | High Frequency |
Still deciding? Get samples of US$ 2.12/Piece
Request Sample
|
Suppliers with verified business licenses
Audited by an independent third-party inspection agency
Category | Discrete Semiconductor Products Transistors - Bipolar (BJT) - Arrays |
Mfr | Toshiba Semiconductor and Storage |
Package | Tube |
Transistor Type | 8 NPN Darlington |
Current - Collector (Ic) (Max) | 500mA |
Voltage - Collector Emitter Breakdown (Max) | 50V |
Vce Saturation (Max) @ Ib, Ic | 1.6V @ 500µA, 350mA |
DC Current Gain (hFE) (Min) @ Ic, Vce | 1000 @ 350mA, 2V |
Power - Max | 1.47W |
Operating Temperature | -40°C ~ 85°C (TA) |
Mounting Type | Through Hole |
Package / Case | 18-DIP (0.300", 7.62mm) |
Supplier Device Package | 18-DIP |