| Certification: | RoHS |
|---|---|
| Encapsulation Structure: | Glass Sealed Transistor |
| Working Frequency: | High Frequency |
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| FET Type | N-Channel |
| Technology | MOSFET (Metal Oxide) |
| Current - Continuous Drain (Id) @ 25°C | 20A (Tc) |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Rds On (Max) @ Id, Vgs | 250mOhm @ 12A, 10V |
| Vgs(th) (Max) @ Id | 5V @ 250µA |
| Vgs (Max) | ±30V |
| FET Feature | - |
| Power Dissipation (Max) | 280W (Tc) |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Mounting Type | Through Hole |
| Supplier Device Package | TO-220AB |
| Package / Case | TO-220-3 |
| Drain to Source Voltage (Vdss) | 500 V |
| Gate Charge (Qg) (Max) @ Vgs | 110 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 2870 pF @ 25 V |
| Base Product Number | IRFB20 |
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