Certification: | RoHS |
---|---|
Shape: | ST |
Function: | High Back Pressure Transistor, Microwave Transistor, Switch Transistor |
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FET Type
|
P-Channel
|
Technology
|
MOSFET (Metal Oxide)
|
Drain to Source Voltage (Vdss)
|
40 V
|
Current - Continuous Drain (Id) @ 25°C
|
50A (Tc)
|
Drive Voltage (Max Rds On, Min Rds On)
|
4.5V, 10V
|
Rds On (Max) @ Id, Vgs
|
10.6mOhm @ 50A, 10V
|
Vgs(th) (Max) @ Id
|
2.2V @ 85µA
|
Gate Charge (Qg) (Max) @ Vgs
|
59 nC @ 10 V
|
Vgs (Max)
|
±16V
|
Input Capacitance (Ciss) (Max) @ Vds
|
3900 pF @ 25 V
|
FET Feature
|
-
|