Certification: | RoHS |
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Shape: | ST |
Function: | High Back Pressure Transistor, Microwave Transistor, Switch Transistor |
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Product Description:
IPAW60R600CE >>> >Contact Us <
Id - Continuous Drain Current: | 10.3 A |
Rds On - Drain-Source Resistance: | 1.4 Ohms |
Vgs - Gate-Source Voltage: | - 20 V, + 20 V |
Vgs th - Gate-Source Threshold Voltage: | 2.5 V |
Qg - Gate Charge: | 20.5 nC |
Minimum Operating Temperature: | - 40 C |
Maximum Operating Temperature: | + 150 C |
Pd - Power Dissipation: | 82 W |
Channel Mode: | Enhancement |
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