Field Effect Transistor 600V Power Transistors Ipaw60r600CE

• Certification: RoHS
• Shape: ST
• Function: High Back Pressure Transistor, Microwave Transistor, Switch Transistor
• Working Frequency: High Frequency
• Structure: Cer-DIP/Ceramic in-Line
• Encapsulation Structure: Chip Transistor
• Model NO.: IPAW60R600CE
• Material: Silicon
• Product Category: Mosfet
• Lead Free Status: RoHS Compliant
• Transistor Polarity: N-Channel
• Installation Style: Through Hole
• Technology: Si
• Product Type: Mosfet
• Shipping by: DHL\UPS\FedEx\EMS\HK Postdhl\UPS\FedEx\EMS\HK Post
• Specification: Number of channels: 1 Channel

Product Description

 

Product Description:


IPAW60R600CE  
 

Id - Continuous Drain Current:	10.3 A
Rds On - Drain-Source Resistance:	1.4 Ohms
Vgs - Gate-Source Voltage:	- 20 V, + 20 V
Vgs th - Gate-Source Threshold Voltage:	2.5 V
Qg - Gate Charge:	20.5 nC
Minimum Operating Temperature:	- 40 C
Maximum Operating Temperature:	+ 150 C
Pd - Power Dissipation:	82 W
Channel Mode:	Enhancement

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