shape: | DIP |
---|---|
Conductive Type: | Enhanced |
Integration: | GSI |
Technics: | Thin Film IC |
Channel Type: | Enhanced MOS Tube |
Brand Name: | Original |
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FET Type
|
N and P-Channel Complementary
|
FET Feature
|
Standard
|
Drain to Source Voltage (Vdss)
|
30V
|
Current - Continuous Drain (Id) @ 25°C
|
6A
|
Rds On (Max) @ Id, Vgs
|
30mOhm @ 6A, 10V
|
Vgs(th) (Max) @ Id
|
2.4V @ 250µA
|
Gate Charge (Qg) (Max) @ Vgs
|
6nC @ 10V
|
Input Capacitance (Ciss) (Max) @ Vds
|
310pF @ 15V
|
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