Ikw25t120 (25A / 1200V) Field Effect for Induction Cooker IGBT Transistor

• Certification: RoHS
• Encapsulation Structure: Chip Transistor
• Installation: Plug-in Triode
• Function: Photosensitive, Darlington Tube, Power Triode
• Material: Silicon
• Shipping by: DHL\UPS\FedEx\EMS\HK Postdhl\UPS\FedEx\EMS\HK Post
• Model NO.: IKW25T120
• Channel Type: N-Channel
• Conductive Mode: Enhanced
• Use: L/Power Amplification
• Package Shape: Cer-DIP / Ceramic in-Line
• Type: Insulated Gate (Mosfet)
• Transport Package: Tube
• Origin: Chn

Product Description

 

IKW25T120 (25A / 1200V) field effect for induction cooker IGBT transistor

 

product information

• Approx. 1.0V reduced VCE(sat) and 0.5V reduced VF compared to BUP314D
• Short circuit withstand time - 10µs
• Designed for :
- Frequency Converters
- Uninterrupted Power Supply
• Trench and Fieldstop technology for 1200 V applications offers :
- very tight parameter distribution
- high ruggedness, temperature stable behavior
• NPT technology offers easy parallel switching capability due to positive temperature coefficient in VCE(sat)
• Low EMI
• Low Gate Charge
• Very soft, fast recovery anti-parallel EmCon HE diode






Packing & Delivery

Packaging: single carton, standard weight per carton





Application range

The company's main products are: ic, mos tube, IGBT, diode / triode, thyristor, Darlington, three-terminalvoltage
regulator, etc






Certification



Application range






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