Infineon Semiconductor Field Effect Transistor Ipw60r070c6 60c7060 To247

Product Details
Product: Ipw60r070c6
Vds - Drain-Source Breakdown Voltage: 600V
Category: Semiconductor

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Number of Employees
18
Year of Establishment
2008-09-17
  • Infineon Semiconductor Field Effect Transistor Ipw60r070c6 60c7060 To247
  • Infineon Semiconductor Field Effect Transistor Ipw60r070c6 60c7060 To247
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Basic Info.

Model NO.
IPW60R070C6
shape
Flat
Specification
/
Trademark
Infineon
Origin
China
Production Capacity
100000

Product Description


Infineon Semiconductor Field Effect Transistor Ipw60r070c6 60c7060 To247Infineon Semiconductor Field Effect Transistor Ipw60r070c6 60c7060 To247
Product Paramenters


Mfr. #: IPW60R070C6
Mfr.: Infineon


Infineon Semiconductor Field Effect Transistor Ipw60r070c6 60c7060 To247
Infineon Semiconductor Field Effect Transistor Ipw60r070c6 60c7060 To247Company Profile
Infineon Semiconductor Field Effect Transistor Ipw60r070c6 60c7060 To247
Infineon Semiconductor Field Effect Transistor Ipw60r070c6 60c7060 To247
Infineon Semiconductor Field Effect Transistor Ipw60r070c6 60c7060 To247Infineon Semiconductor Field Effect Transistor Ipw60r070c6 60c7060 To247

Product packaging
Infineon Semiconductor Field Effect Transistor Ipw60r070c6 60c7060 To247FAQ

Infineon Semiconductor Field Effect Transistor Ipw60r070c6 60c7060 To247
Infineon Semiconductor Field Effect Transistor Ipw60r070c6 60c7060 To247
 

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