Ikw30n60h3 IGBT 30A 600V To247 K30h603 Transistor

• Encapsulation Structure: Chip Transistor
• Installation: /
• Working Frequency: High Frequency
• Model NO.: K30H603
• Power Level: High Power
• Function: Power Triode
• Structure: /
• Material: Plastic
• Collector Current-Max (IC): 60A
• Voltage - Collector Emitter Breakdown (M: 600 V
• Configuration: Single with Built-in Diode
• Transistor Application: Power Control
• Mounting Type: Through Hole
• Polarity/Channel Type: N-Channel
• Operating Temperature-Max: 175c
• Package: Tube
• Power - Max: 187 W
• Transport Package: Standard Packaging
• Specification: to-247
• Trademark: /
• Origin: Chn
• Production Capacity: 10000

Product Description

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Product Paramenters

Applications:
•uninterruptiblepowersupplies
•weldingconverters
•converterswithhighswitchingfrequency

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Low freq-uency power amplifier complementary pair with 2SB649/A

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