Encapsulation Structure: | Chip Transistor |
---|---|
Transistor Polarity: | N-Channel |
Product Number: | STP20nm60fp |
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Product Description
FET Type
|
N-Channel
|
Technology
|
MOSFET (Metal Oxide)
|
Drain to Source Voltage (Vdss)
|
600 V
|
Current - Continuous Drain (Id) @ 25°C
|
20A (Tc)
|
Drive Voltage (Max Rds On, Min Rds On)
|
10V
|
Rds On (Max) @ Id, Vgs
|
290mOhm @ 10A, 10V
|
Vgs(th) (Max) @ Id
|
5V @ 250µA
|
Gate Charge (Qg) (Max) @ Vgs
|
54 nC @ 10 V
|
Vgs (Max)
|
±30V
|