Technology: | Mosfet |
---|---|
Category: | Transistors |
Detailed Description: | N-Channel 98A (Tc) 190W (Tc) Through Hole to-220 |
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Product Description
Technology
|
MOSFET (Metal Oxide)
|
Drain to Source Voltage (Vdss)
|
68 V
|
Current - Continuous Drain (Id) @ 25°C
|
98A (Tc)
|
Drive Voltage (Max Rds On, Min Rds On)
|
10V
|
Rds On (Max) @ Id, Vgs
|
9.8mOhm @ 40A, 10V
|
Vgs(th) (Max) @ Id
|
4V @ 250µA
|
Gate Charge (Qg) (Max) @ Vgs
|
75 nC @ 10 V
|
Vgs (Max)
|
±20V
|
Input Capacitance (Ciss) (Max) @ Vds
|
2550 pF @ 25 V
|
FET Feature
|
-
|
Power Dissipation (Max)
|
190W (Tc)
|