• Sia433edj-T1-Ge3 P-Channel 20-V (D-S) Field-Effect Transistor Mosfet
  • Sia433edj-T1-Ge3 P-Channel 20-V (D-S) Field-Effect Transistor Mosfet
  • Sia433edj-T1-Ge3 P-Channel 20-V (D-S) Field-Effect Transistor Mosfet
  • Sia433edj-T1-Ge3 P-Channel 20-V (D-S) Field-Effect Transistor Mosfet
  • Sia433edj-T1-Ge3 P-Channel 20-V (D-S) Field-Effect Transistor Mosfet
  • Sia433edj-T1-Ge3 P-Channel 20-V (D-S) Field-Effect Transistor Mosfet

Sia433edj-T1-Ge3 P-Channel 20-V (D-S) Field-Effect Transistor Mosfet

Certification: RoHS
Shape: ST
Shielding Type: Sharp Cutoff Shielding Tube
Cooling Method: Water Cooled Tube
Function: High Back Pressure Transistor, Microwave Transistor, Switch Transistor
Working Frequency: High Frequency
Diamond Member Since 2016

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Rating: 5.0/5
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Basic Info.

Model NO.
SIA433EDJ-T1-GE3
Structure
Diffusion
Encapsulation Structure
Chip Transistor
Material
Silicon
Product Number
Sia433edj-T1-Ge3
Description
P-Channel 20 V 12A (Tc) 3.5W (Ta), 19W (Tc)
Category
Mosfet
Product
Sia433edj
Technology
Mosfet (Metal Oxide)
Mounting Type
Surface Mount
Transport Package
/
Specification
/
Trademark
original
Origin
Chn

Product Description


Sia433edj-T1-Ge3 P-Channel 20-V (D-S) Field-Effect Transistor Mosfet

Sia433edj-T1-Ge3 P-Channel 20-V (D-S) Field-Effect Transistor Mosfet

FET Type ;   P-Channel
Technology  ;  MOSFET (Metal Oxide)
Current - Continuous Drain (Id) @ 25°C    12A (Tc)
Drive Voltage (Max Rds On, Min Rds On)    1.8V, 4.5V
Sia433edj-T1-Ge3 P-Channel 20-V (D-S) Field-Effect Transistor Mosfet


Sia433edj-T1-Ge3 P-Channel 20-V (D-S) Field-Effect Transistor MosfetSia433edj-T1-Ge3 P-Channel 20-V (D-S) Field-Effect Transistor MosfetSia433edj-T1-Ge3 P-Channel 20-V (D-S) Field-Effect Transistor MosfetSia433edj-T1-Ge3 P-Channel 20-V (D-S) Field-Effect Transistor Mosfet

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