| Encapsulation Structure: | Ceramic Packaged Transistor |
|---|---|
| Installation: | Plug-in Triode |
| Working Frequency: | Overclocking |
|
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| Transistor Polarity: | N-Channel |
| Number of Channels: | 1 Channel |
| Vds - Drain-Source Breakdown Voltage: | 100 V |
| Id - Continuous Drain Current: | 42 A |
| Rds On - Drain-Source Resistance: | 36 mOhms |
| Vgs - Gate-Source Voltage: | - 20 V, + 20 V |
| Vgs th - Gate-Source Threshold Voltage: | 2 V |
| Qg - Gate Charge: | 73.3 nC |
| Minimum Operating Temperature: | - 55 C |
| Maximum Operating Temperature: | + 175 C |
| Pd - Power Dissipation: | 160 W |
| Channel Mode: | Enhancement |
| Packaging: | Tube |
| Configuration: | Single |
| Height: | 15.65 mm |
FAQ
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