Encapsulation Structure: | Chip Transistor |
---|---|
Installation: | Through Hole |
Function: | Power Triode, Power Transistor |
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Category | Discrete Semiconductor Products Transistors - Bipolar (BJT) - Single |
Package | Tube |
Transistor Type | PNP - Darlington |
Vce Saturation (Max) @ Ib, Ic | 3V @ 40mA, 10A |
Current - Collector Cutoff (Max) | 2mA |
DC Current Gain (hFE) (Min) @ Ic, Vce | 1000 @ 5A, 4V |
Frequency - Transition | - |
Operating Temperature | 150°C (TJ) |
Mounting Type | Through Hole |
Package / Case | TO-247-3 |