Certification: | RoHS, CE, ISO, CCC |
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Encapsulation Structure: | Chip Transistor |
Installation: | Plug-in Triode |
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Transistor Polarity: | N-Channel |
Number of Channels: | 1 Channel |
Vds - Drain-Source Breakdown Voltage: | 200 V |
Id - Continuous Drain Current: | 76 A |
Rds On - Drain-Source Resistance: | 20 mOhms |
Vgs - Gate-Source Voltage: | - 20 V, + 20 V |
Vgs th - Gate-Source Threshold Voltage: | 1.8 V |
Qg - Gate Charge: | 100 nC |
Minimum Operating Temperature: | - 55 C |
Maximum Operating Temperature: | + 175 C |
Pd - Power Dissipation: | 375 W |
Channel Mode: | Enhancement |
Packaging: | Tube |
Configuration: | Single |
Height: | 15.65 mm |
Length: | 10 mm |
Transistor Type: | 1 N-Channel |
Width: | 4.4 mm |