Original New IGBT Transistors K40h603 Ikw40n60h3

Product Details
Certification: RoHS
Encapsulation Structure: Chip Transistor
Installation: Plug-in Triode

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Number of Employees
18
Year of Establishment
2008-09-17
  • Original New IGBT Transistors K40h603 Ikw40n60h3
  • Original New IGBT Transistors K40h603 Ikw40n60h3
  • Original New IGBT Transistors K40h603 Ikw40n60h3
  • Original New IGBT Transistors K40h603 Ikw40n60h3
  • Original New IGBT Transistors K40h603 Ikw40n60h3
  • Original New IGBT Transistors K40h603 Ikw40n60h3
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Basic Info.

Model NO.
IKW40N60H3
Working Frequency
High Frequency
Power Level
High Power
Function
Photosensitive, Darlington Tube, Power Triode, IGBT
Structure
Alloy
Material
Iron and Plastic
Collector-Emitter Voltage-Max
600V
Product Type
IGBT Transistors
Category
IGBT
Installation Style
Through Hole
Gate-Emitter Voltage-Max
20 V
Transistor Application
Power Control
Subcategory
Transistor
Gate-Emitter Thr Voltage-Max
5.7V
Samacsys Description
IGBT Transistors 600V 40A 306W
Package
Tube
Current - Collector (IC) (Max)
80 a
Transport Package
Tube
Specification
iron and plastic
Trademark
original
Origin
China

Product Description


Original New IGBT Transistors K40h603 Ikw40n60h3
Original New IGBT Transistors K40h603 Ikw40n60h3

Product Paramenters

Description: IGBT Transistors 600V 40A 306W
Mounting Style: Through Hole  
Configuration: Single  
Collector- Emitter Voltage VCEO Max: 600 V  
Collector-Emitter Saturation Voltage: 1.95 V


Original New IGBT Transistors K40h603 Ikw40n60h3



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Original New IGBT Transistors K40h603 Ikw40n60h3
Original New IGBT Transistors K40h603 Ikw40n60h3
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Original New IGBT Transistors K40h603 Ikw40n60h3
Original New IGBT Transistors K40h603 Ikw40n60h3

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