Photosensitive, Darlington Tube, Power Triode, IGBT
Structure
Alloy
Material
Iron and Plastic
Collector-Emitter Voltage-Max
600V
Product Type
IGBT Transistors
Category
IGBT
Installation Style
Through Hole
Gate-Emitter Voltage-Max
20 V
Transistor Application
Power Control
Subcategory
Transistor
Gate-Emitter Thr Voltage-Max
5.7V
Samacsys Description
IGBT Transistors 600V 40A 306W
Package
Tube
Current - Collector (IC) (Max)
80 a
Transport Package
Tube
Specification
iron and plastic
Trademark
original
Origin
China
Product Description
Product Paramenters
Description: IGBT Transistors 600V 40A 306W
Mounting Style: Through Hole
Configuration: Single
Collector- Emitter Voltage VCEO Max: 600 V
Collector-Emitter Saturation Voltage: 1.95 V