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New and Original Irf1010npbf in-Line Power Field-Effect Transistor Irf1010n

Product Details

Certification:	RoHS
Shape:	ST
Shielding Type:	/

Shenzhen Jin Da Peng Technology Co., Ltd.

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Year of Establishment

2008-09-17

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Product Description

Company Info.

Basic Info.

Model NO.

IRF1010N

Cooling Method

Function

High Back Pressure Transistor, Microwave Transistor, Switch Transistor

Working Frequency

High Frequency

Encapsulation Structure

Chip Transistor

Power Level

High Power

Material

Silicon

Product Number

Irf520npbf

Description

Mosfet N-CH 100V 9.7A To220

Product Description

Product Description

Ultra Low On-Resistance
Dynamic dv/dt Rating
175°C Operating Temperature
Fast Switching
Fully Avalanche Rated

New and Original Irf1010npbf in-Line Power Field-Effect Transistor Irf1010n

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