N Channel IGBT Transistor to-220f Transistor Rjp63K2

• Certification: RoHS
• Shape: DIP
• Working Frequency: High Frequency
• Model NO.: RJP63K2
• Encapsulation Structure: DIP
• Power Level: High Power
• Material: Plastic and Copper
• Power Dissipation-Max (ABS): 25 W
• Polarity/Channel Type: N-Channel
• Product Number: Rjp63K2
• Detailed Description: Transistor
• Category: IGBT
• Gate-Emitter Voltage-Max: 30 V
• Transport Package: Standard Packaging
• Specification: Plastic and copper
• Trademark: CHN
• Origin: China

Product Description

Trench gate and thin wafer technology (G6H-II series)
Low collector to emitter saturation voltage: V CE(sat) = 1.9 V typ
High speed switching: t r = 60 ns typ, t f = 200 ns typ.