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N Channel IGBT Transistor to-220f Transistor Rjp63K2
Reference FOB Price
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US $0.25-0.55
/ Piece
|
500 Pieces
(Min. Order)
Certification:
RoHS
Shape:
DIP
Working Frequency:
High Frequency
Encapsulation Structure:
DIP
Power Level:
High Power
Material:
Plastic and Copper
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Shenzhen Jin Da Peng Technology Co., Ltd.
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Since 2016
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Rating:
5.0/5
Trading Company
Product Description
Company Info.
Basic Info.
Model NO.
RJP63K2
Power Dissipation-Max (ABS)
25 W
Polarity/Channel Type
N-Channel
Product Number
Rjp63K2
Detailed Description
Transistor
Category
IGBT
Gate-Emitter Voltage-Max
30 V
Transport Package
Standard Packaging
Specification
Plastic and copper
Trademark
CHN
Origin
China
Product Description
Trench gate and thin wafer technology (G6H-II series)
Low collector to emitter saturation voltage: V CE(sat) = 1.9 V typ
High speed switching: t r = 60 ns typ, t f = 200 ns typ.
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Shenzhen Jin Da Peng Technology Co., Ltd.
360° Virtual Tour
Diamond Member
Since 2016
Suppliers with verified business licenses
Audited Supplier
Rating:
5.0/5
Trading Company
Number of Employees
18
Year of Establishment
2008-09-17