Certification: | RoHS |
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Encapsulation Structure: | Ceramic Packaged Transistor |
Installation: | SMD Triode |
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Category | Discrete Semiconductor Products Transistors - FETs, MOSFETs - Single |
Package | Tube |
FET Type | N-Channel |
Technology | MOSFET (Metal Oxide) |
Current - Continuous Drain (Id) @ 25°C | 2A (Tc) |
Drive Voltage (Max Rds On, Min Rds On) | 10V |
Rds On (Max) @ Id, Vgs | 4.7Ohm @ 1A, 10V |
Vgs(th) (Max) @ Id | 4V @ 250µA |
Vgs (Max) | ±30V |
Power Dissipation (Max) | 23W (Tc) |
Operating Temperature | -55°C ~ 150°C (TJ) |
Mounting Type | Through Hole |
Supplier Device Package | TO-220F |
Package / Case | TO-220-3 Full Pack |
Drain to Source Voltage (Vdss) | 600 V |
Gate Charge (Qg) (Max) @ Vgs | 12 nC @ 10 V |
Input Capacitance (Ciss) (Max) @ Vds | 235 pF @ 25 V |