| Certification: | RoHS |
|---|---|
| Shape: | ST |
| Function: | High Back Pressure Transistor, Microwave Transistor, Switch Transistor |
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This IGBT is specifically designed for applications in Plasma Display Panels. This device utilizes advancedtrench IGBT technology to achieve low VCE(on) and low EPULSETM rating per silicon area which improve panelefficiency. Additional features are 150°C operating junction temperature and high repetitive peak currentcapability. These features combine to make this IGBT a highly efficient, robust and reliable device for PDPapplications |
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