Irg7s313utrlpbf Save IC Irg7s313u Integrated Circuit

• Certification: RoHS
• Shape: ST
• Function: High Back Pressure Transistor, Microwave Transistor, Switch Transistor
• Working Frequency: High Frequency
• Encapsulation Structure: SMD(So)
• Brand Name: Original
• Model NO.: IRG7S313UPBF
• Lead Free Status: RoHS Compliant
• Shipping by: DHL\UPS\FedEx\EMS\HK Postdhl\UPS\FedEx\EMS\HK Post
• Condition: Brand Newand Original
• Transport Package: Carton

Product Description

 

IRG7S313UPBF PDP TRENCH IGBT 

product information

 

This IGBT is specifically designed for applications in Plasma Display Panels. This device utilizes advancedtrench IGBT technology to achieve low VCE(on) and low EPULSETM rating per silicon area which improve panelefficiency. Additional features are 150°C operating junction temperature and high repetitive peak currentcapability. These features combine to make this IGBT a highly efficient, robust and reliable device for PDPapplications
 

 Advanced Trench IGBT Technology
Optimized for Sustain and Energy Recovery circuits in PDP applications
 Low VCE(on) and Energy per Pulse (EPULSETM) for improved panel efficiency
 High repetitive peak current capability
 Lead Free package





Packing & Delivery

Packaging: single carton, standard weight per carton









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other products

The company's main products are: ic, mos tube, IGBT, diode / triode, thyristor, Darlington, three-terminal
voltage regulator, etc




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