• Bfp196 Low Noise Bipolar RF Transistor Bfp196wh6327xtsa1
  • Bfp196 Low Noise Bipolar RF Transistor Bfp196wh6327xtsa1
  • Bfp196 Low Noise Bipolar RF Transistor Bfp196wh6327xtsa1
  • Bfp196 Low Noise Bipolar RF Transistor Bfp196wh6327xtsa1
  • Bfp196 Low Noise Bipolar RF Transistor Bfp196wh6327xtsa1
  • Bfp196 Low Noise Bipolar RF Transistor Bfp196wh6327xtsa1

Bfp196 Low Noise Bipolar RF Transistor Bfp196wh6327xtsa1

shape: Flat
Conductive Type: Unipolar Integrated Circuit
Integration: GSI
Technics: Silicon
Application: Security Equipment
Type: Transistor
Diamond Member Since 2016

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Basic Info.

Model NO.
BFP196WH6327XTSA1
Brand Name
Original
Lead Free Status
RoHS Compliant
Product Type
Bipolar Transistor-Bipolar Junction
Transistor Polarity
NPN
Use
Radar Sensor
Transport Package
Standard Packaging
Specification
NPN microwave low noise transistor
Trademark
CHN
Origin
Chn

Product Description


Bfp196 Low Noise Bipolar RF Transistor Bfp196wh6327xtsa1

 

Bfp196 Low Noise Bipolar RF Transistor Bfp196wh6327xtsa1
BFP196 Low noise bipolar RF transistor
• For low noise, low distortion broadband amplifiers in antenna and telecommunications systems up to 1.5 GHz at collector currents from 20 mA to 80 mA
• Power amplifier for DECT and PCN systems
• fT = 7.5 GHz, NFmin = 1.3 dB at 900 MHz
• Pb-free (RoHS compliant) and halogen-free package with visible leads
• Qualification report according to AEC-Q101 available

Bfp196 Low Noise Bipolar RF Transistor Bfp196wh6327xtsa1


Bfp196 Low Noise Bipolar RF Transistor Bfp196wh6327xtsa1Bfp196 Low Noise Bipolar RF Transistor Bfp196wh6327xtsa1
Bfp196 Low Noise Bipolar RF Transistor Bfp196wh6327xtsa1Bfp196 Low Noise Bipolar RF Transistor Bfp196wh6327xtsa1
 

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