Encapsulation Structure: | Chip Transistor |
---|---|
Installation: | Plug-in Triode |
Working Frequency: | High Frequency |
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IGBT Type | NPT and Trench |
Vce(on) (Max) @ Vge, Ic | 2V @ 15V, 25A |
Switching Energy | 800µJ (off) |
Input Type | Standard |
Operating Temperature | -40°C ~ 150°C (TJ) |
Mounting Type | Through Hole |
Voltage - Collector Emitter Breakdown (Max) | 1200 V |
Current - Collector (Ic) (Max) | 50 A |
Current - Collector Pulsed (Icm) | 75 A |
Power - Max | 231 W |
Gate Charge | 147 nC |