High Quality Transistors Fgh40n60SMD To247 600V 40A 40n60 IGBT Tube Fgh40n60

US$2.50 - 4.00 10 Pieces (MOQ)
Product Details
Shape: GT
Shielding Type: Sharp Cutoff Shielding Tube
Cooling Method: Naturally Cooled Tube
Shenzhen Jin Da Peng Technology Co., Ltd.
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Rating
5.0
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Year of Establishment
2008-09-17
Number of Employees
18
High Quality Transistors Fgh40n60SMD To247 600V 40A 40n60 IGBT Tube Fgh40n60 pictures & photos
High Quality Transistors Fgh40n60SMD To247 600V 40A 40n60 IGBT Tube Fgh40n60 pictures & photos
High Quality Transistors Fgh40n60SMD To247 600V 40A 40n60 IGBT Tube Fgh40n60 pictures & photos
High Quality Transistors Fgh40n60SMD To247 600V 40A 40n60 IGBT Tube Fgh40n60 pictures & photos
High Quality Transistors Fgh40n60SMD To247 600V 40A 40n60 IGBT Tube Fgh40n60 pictures & photos
High Quality Transistors Fgh40n60SMD To247 600V 40A 40n60 IGBT Tube Fgh40n60 pictures & photos
  • High Quality Transistors Fgh40n60SMD To247 600V 40A 40n60 IGBT Tube Fgh40n60
  • High Quality Transistors Fgh40n60SMD To247 600V 40A 40n60 IGBT Tube Fgh40n60
  • High Quality Transistors Fgh40n60SMD To247 600V 40A 40n60 IGBT Tube Fgh40n60
  • High Quality Transistors Fgh40n60SMD To247 600V 40A 40n60 IGBT Tube Fgh40n60
  • High Quality Transistors Fgh40n60SMD To247 600V 40A 40n60 IGBT Tube Fgh40n60
  • High Quality Transistors Fgh40n60SMD To247 600V 40A 40n60 IGBT Tube Fgh40n60
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Basic Info.

Model NO.
FGH40N60SMD
Function
IGBT Transistor
Working Frequency
High Frequency
Structure
Alloy
Encapsulation Structure
Ceramic Packaged Transistor
Power Level
High Power
Material
Silicon
Installation Style
SMD / SMT
Product Category
IGBT Transistors
Operating Temperature
Standard
Collector- Emitter Voltage Vceo Max
600 V
Additional Feature
Low Conduction Loss
Series
Fgh40n60SMD
Packaging
Tube
Base Product Number
Fgh40n60
Subcategory
IGBT
Specification
standard
Trademark
/
Origin
China
Production Capacity
500000

Product Description

 

High Quality Transistors Fgh40n60SMD To247 600V 40A 40n60 IGBT Tube Fgh40n60
High Quality Transistors Fgh40n60SMD To247 600V 40A 40n60 IGBT Tube Fgh40n60
Product Paramenters

Features
• Maximum Junction Temperature : TJ = 175°C
• Positive Temperature Co−efficient for Easy Parallel Operating
• High Current Capability
• Low Saturation Voltage: VCE(sat) = 1.9 V (Typ) @ IC = 40 A
• High Input Impedance

High Quality Transistors Fgh40n60SMD To247 600V 40A 40n60 IGBT Tube Fgh40n60
 
Low frequency power amplifier complementary pair with 2SB649/A
High Quality Transistors Fgh40n60SMD To247 600V 40A 40n60 IGBT Tube Fgh40n60Company Profile
High Quality Transistors Fgh40n60SMD To247 600V 40A 40n60 IGBT Tube Fgh40n60
High Quality Transistors Fgh40n60SMD To247 600V 40A 40n60 IGBT Tube Fgh40n60
High Quality Transistors Fgh40n60SMD To247 600V 40A 40n60 IGBT Tube Fgh40n60
High Quality Transistors Fgh40n60SMD To247 600V 40A 40n60 IGBT Tube Fgh40n60
Product packaging
High Quality Transistors Fgh40n60SMD To247 600V 40A 40n60 IGBT Tube Fgh40n60
FAQ
High Quality Transistors Fgh40n60SMD To247 600V 40A 40n60 IGBT Tube Fgh40n60
High Quality Transistors Fgh40n60SMD To247 600V 40A 40n60 IGBT Tube Fgh40n60

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Shenzhen Jin Da Peng Technology Co., Ltd.
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