Technology: | Mosfet |
---|---|
Installation Type: | Through Hole |
Transistor Polarity: | N-Channel |
Suppliers with verified business licenses
Audited by an independent third-party inspection agency
Transistor Polarity: | N-Channel |
Number of Channels: | 1 Channel |
Vds - Drain-Source Breakdown Voltage: | 600 V |
Id - Continuous Drain Current: | 20.2 A |
Rds On - Drain-Source Resistance: | 170 mOhms |
Vgs - Gate-Source Voltage: | - 20 V, + 20 V |
Vgs th - Gate-Source Threshold Voltage: | 2.5 V |
Qg - Gate Charge: | 63 nC |
Minimum Operating Temperature: | - 55 C |
Maximum Operating Temperature: | + 150 C |
Pd - Power Dissipation: | 151 W |
Channel Mode: | Enhancement |
Tradename: | CoolMOS |
Packaging: | Tube |
Configuration: | Single |
Height: | 15.65 m |