Certification: | RoHS, CE, ISO |
---|---|
Encapsulation Structure: | Chip Transistor |
Function: | N-Channel Mosfet |
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IGBT Type
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Field Stop
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Voltage - Collector Emitter Breakdown (Max)
|
600 V
|
Current - Collector (Ic) (Max)
|
120 A
|
Current - Collector Pulsed (Icm)
|
180 A
|
Vce(on) (Max) @ Vge, Ic
|
2.4V @ 15V, 60A
|
Power - Max
|
298 W
|
Switching Energy
|
1.81mJ (on), 810µJ (off)
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Input Type
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Standard
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Gate Charge
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188 nC
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Td (on/off) @ 25°C
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23ns/130ns
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